Fuji v series igbt driver

Technical documents mt5f14993 quality is our message 1 8 101214161 0 200 400 600 800 1200 1400 1600 150ua120 200ub120 300ud120 i sc a v ge visc fuji igbt modules u series short circuit vs vge characteristics 1200v sample. Buy fuji electric 2mbi100va06050, m263, nchannel series igbt module, 100 a max, 600 v, surface mount 2mbi100va06050. Fuji igbt gate driver this product series uses our companys 6thgeneration igbt chip set. Huge fuji igbts inventory same day shipping expert technical support. Igbt series here v series igbt technology igbt development current class i c a 2mbi 450 v h12050 planar gate trench gate n series 3rd generation 4th generation ptepi 19952011 npt 1998 s series 5th generation fieldstop 2005 uu4 series 6th generation fieldstop 2009 v series number of igbt switches not chips device type mbi mbr mbp.

St offers a comprehensive portfolio of igbts insulated gate bipolar transistors optimized for diverse application needs, such as industrial and automotive. This has successfully reduced power dissipation in inverter operation compared with conventional products fuji electrics 6thgeneration v series, contributing. Semikron offers igbt insulated gate bipolar transistor modules in semitrans, semix, skim, miniskiip and semitop packages in different topologies, current and voltage ratings. Fuji electric is a global manufacturer and supplier of igbt modules, inverters, and power semiconductor products for a variety of industrial applications. C2 fuji hseries 20khz 30khz 40khz 50khz standard 10khz carrier frequency. Fuji electrics igbt module or insulated gate bipolar transistor is a highperformance 7th generation igbtfwd chipset with a compact design that provides for greater power output. Rdgd3100f3ph5evb is a power inverter reference design featuring the gd3100 advanced igbt gate driver for high voltage 3phase ev motor control. The lowside and highside gate drivers are independently controlled with shoot thru protection or. Plug and play igbt insulatedgate bipolar transistor gate drivers are.

Igbt drivers are among the most efficient in the industry, which is critical in the use of igbts in renewable energy applications such as solar inverters, wind turbines, hybrid electric vehicles, motor drives, etc. Fdt succeeded in enhancing the characteristics of the first three igbt generations, by using epitaxial wafers, optimizing the lifetime control techniques, and by applying fine patterning technology. Find fuji electric vseries igbt,6th gen igbt from hong kong manufacturer, manufactory, factory and supplier westpac electronics limited on. Jun 14, 2015 6mbp20jb060 is a fuji electric manufactured igbt module which can produce energy of up to 20a and 600v, making it an excellent fuji semiconductor to power up an industrial ventilator system. The punchthrough igbt used the epitaxial sillicon wafer and the minority carriers were high. M263 series igbt module, 100 a max, 600 v, surface mount. I c a characteristics of highspeed igbt module switching loss 200a module 0 5 10 15 20 25 30 0 50 100 150 200 250 300 collector current. Find fuji electric v series igbt,6th gen igbt from hong kong manufacturer, manufactory, factory and supplier westpac electronics limited on. Compared to the vseries, the latest xseries reduces power losses and contributes to energy saving. Emi consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. Device voltage balance circuit system g igbt e gate drive circuit gdu 1 r d1 q 1 q 2 v ce1 r d2 v ce2 v t2 v t1 vg2 vi2 vg1 i c ig2 ig1 g input signal input signal vi1 gate balance core tg e gdu 2 the following explains the principle of operation.

Drivers also provide higher power output, thus eliminating the need for multiple gate drivers in parallel igbt application. Rdgd3100f3ph5evb power gate drive board reference design features the. Maximum continuous operation temperature of xseries is also expanded from 150c to 175c. E o f f m j p u l s e fuji u4 series fuji u4 series fuji h series fuji h series output. The chip structure also evolved from a flat planar structure to a trench gate structure, and the cstbt mitsubishi electrics unique igbt that. Highpower igbt modules up to 1200v in different topologies. As a member of the concept plugandplay driver family, it satisfies industrys requirements for. Fuji transistors igbts product catalog search results. Fuji ttype threelevel parallel scheme the 2qd30a17ki series drive core driver with two 73mm parallel igbt 4mbi900vb120r150 fourchannel twoway driver, each output power is 4w, peak current is 30a gate open voltage is 15v, turnoff voltage is 15v. Description igbtipm r series 600v 75a 7 in onepackage. Request info find local sales subscribe to mailing list. Igbt series here vseries igbttechnology igbt development current class i c a.

It has environmentally friendly modules with easy assemblage, solderfree options, and rohs compliance. Fuji electric device technology fdt began producing and marketing igbts insulated gate bipolar transistors in 1988 and has been supplying them to the market ever since. Drivers perfectly matched for fuji igbts designed from the ground up to work specifically with fuji high voltage igbt modules in demanding applications. Starting from 4a to 1400a in voltage classes from 600v to 1700v, the igbt modules are used in a variety of applications and feature key technologies such as sintering. Units collectoremitter voltage 1 vces 0 600 v short circuit voltage vsc 200 400 v collector current dc ic 50 a 1ms ic pulse 100 a duty100. The planargate punchthrough igbt was the mainstream igbt at that time. Fuji power semiconductors igbtsic devices selection guide.

Compatible with 200 v to 1700 v igbtsic, power range 125 kw. Supply current of pline side predriverone unit supply current of nline side predriver. Fundamentals of mosfet and igbt gate driver circuits. Fuji electric smallipm series applications manual pdf. The mic4608 features a 450ns propagation delay including a 200ns input filtering time to prevent unwanted pulses. The wellknown 62 mm, easy and econo families, ihm ihv bseries, primepack and xhp power modules are all equipped with the latest igbt technologies. This page lists technical documents for the igbt module v series. Select via different parameters and find out more with datasheets or other technical information. Based on sts thirdgeneration of trenchgate fieldstop technology, they increase the efficiency of power supplies, welders and industrial motor drive applications thanks to the optimal tradeoff. Igbt insulatedgate bipolar transistors stmicroelectronics. M719 modules support both fuji electric 7th generation igbt xseries and 6th generation igbt vseries.

The igbt inverter turnon switching characteristics include. Fuji electric vseries igbt,6th gen igbt from hong kong. Multiseries connection of highvoltage igbts yasushi abe koji maruyama 1. Whether you need fuji igbt modules or something else, igbt express should be your first choice for igbt electronic components. Unit datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Input signal threshold voltage onoff input zener voltage. Optimized for use in lowfrequency up to 8 khz, hardswitching topologies, sts s series of 1200 v igbts feature the industrys lowest v cesat among 1200 v igbts currently on the market. The punchthrough igbt used the epitaxial sillicon wafer and the minority carriers were highinjected from the collector side to obtain strong. Driver driver driver driver driver driver driver driver driver driver driver driver ipm ipm intelligent power. V series trenchfs high speed v series trenchfs v series trenchfs high speed v series fgw30n60vd fgw50n60vd fgw75n60vd fgw50n60hd fgw35n60hd fgw35n60h fgw75n60hd fgw50n60h fgw75n60h fgw15n120vd fgw15n120hd fgw30n120hd fgw40n120hd fgw15n120h fgw30n120h fgw40n120h fgw25n120vd fgw40n120vd mm ic under. We make it easy to find the exact fuji igbt module you need.

Deliver more power than competitive gate drivers only plug and play solutions available for 450a and 600a econodual. Igbt insulated gate bipolar transistor module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990. Fuji electric selection guide 2018 stolz electronics ag. Fuji electric 2mbi100u4a12050, m232 series igbt module, 100 a max, 1200 v, panel mount configuration series. This board is designed to be connected to a fuji electric m653 series igbt module footprint not included. Fuji electric has been providing igbts to the market since it commercialized them in 1988.

The first type is implemented between the dc power supply busbars and is called lump snubber. C, vcc15v unless otherwise specified items symbol min. The igbt and diode devices of fuji electrics 7thgeneration x series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. Driver pre driver pre driver pre driver pre driver pre driver pre driver pre driver pre driver pre driver pre. They come in chopper, dual, pim, fourpack, sixpack, twelvepack, 3level, booster or single switch configuration with a current rating between 6 a and 3600 a. Fuji electric 2mbi100va06050, m263, nchannel series igbt. As a result, the gate wire of each series connected device is magnetically coupled. Javascript must be enabled to view full functionality of our site.

One of these benefits is the ease of use of the mosfet devices in high frequency switching applications. This board is designed to be connected to a fuji electric m653 series igbt. Igbt modules igbt inverter semiconductors fuji electric. The igbt combines the simple gatedrive characteristics of the mosfets with the highcurrent and. Fuji electric offers an extensive lineup of igbt modules. Browse a wide range of fuji electric semiconductors. Technical documents mt5f14993 quality is our message 1 8 101214161 0 200 400 600 800 1200 1400 1600 150ua120 200ub120 300ud120 i sc a v ge v isc fuji igbt modules u series. Igbt module v series 600v 75a ipm online from elcodis, view and download 6mbp75vba06050 pdf datasheet, in stock specifications.

Gate series resistance see switching time test conditions for standard. The maximum average output current of the driver must be higher than the calculated value. Fundamentals of mosfet and igbt gate driver circuits the popularity and proliferation of mosfet technology for digital and power applications is driven by two of their major advantages over the bipolar junction transistors. As a member of the concept plugandplay driver family, it satisfies industrys requirements for optimized electrical performance and noise immunity. View and download fuji electric smallipm series applications manual online.